However, in order to enable the production of high-quality SiC crystals as a series product by means of physical vapour deposition, modelling methods are needed that are able to predict the crystal growth processes as precisely as possible. Therefore, Head of Laboratory Lorenz Romaner and his team, supported by commercial partner EEMCO GmbH, have set themselves the goal of finding novel modelling methods for the virtual description of (SiC) crystal growth processes in the semiconductor industry (which should also be transferable to other crystals in the future): For this purpose, physics-based and data-driven modelling approaches are combined to obtain the most efficient and predictive approach possible!
Pictured from left to right: In the photo from left to right: Peter Moser (Vice Rector Montanuniversität Leoben), Ulrike Unterer (CDG Vice President and Head of Department at BMAW), Stefan Defegger (EEMCO), Head of Laboratory Romaner and Rene Hammer (EEMCO).
Further information on the CD Laboratory
Press release (Montanuniversität Leoben)
New CD Laboratory all about crystal growth processes
06.03.2023: Semiconductors with a wide band gap have a great deal of potential for future applications in power electronics, especially in the field of e-mobility. The focus of the new Christian Doppler Laboratory for Advanced Computational Design of Crystal Growth at Montanuniversität Leoben is silicon carbide, or SiC for short, which is particularly promising in this context. SiC-based components can be operated at higher voltages and temperatures than would be possible with silicon-based components. At the same time, switching frequencies can be increased and power losses are reduced by up to half.
CDG-News